HSMS-2815-TR1G Avago Technologies US Inc., HSMS-2815-TR1G Datasheet - Page 2

• Manufacturer Part Number: HSMS-2815-TR1G
• Description: DIODE SCHOTTKY GP LN 20V SOT-143
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-2815-TR1G

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (max): 20V
• Current - Max: 1A
• Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
• Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 1 V @ 0.035 A
• Maximum Reverse Leakage Current: 0.2 uA @ 15 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Capacitance Ct: 1.2pF
• Diode Case Style: SOT-143
• Breakdown Voltage: 20V
• Forward Voltage: 400mV
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Diode Configuration: Dual Independent
• Forward Current If Max: 1A
• Forward Voltage Vf Max: 410mV
• No. Of Pins: 4
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 20V
• Rev Curr: 0.2uA
• Operating Temp Range: -65C to 150C
• Package Type: SOT-143
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1816-2; HSMS-2815-TR1G

Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Notes:
1. ∆V
2. ∆C
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance. ”
5. R
2
Electrical Specifications T
Symbol
I
P
T
T
θ
f
Number Marking Lead
stg
j
IV
jc
HSMS
Test Conditions
2810
2812
2813
2814
2815
2817
2818
281B
281C
281K
281E
281F
281L
D
Part
C
F
TO
= R
= +25°C, where T
for diodes in pairs and quads in 15 mV maximum at 1 mA.
for diodes in pairs and quads is 0.2 pF maximum.
[4]
S
+ 5.2 Ω at 25°C and I
Package
Code
B0
B2
B3
B4
B5
B7
B8
B0
B2
B3
B4
BK
BL
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Code Configuration
B
C
K
0
2
3
4
5
7
8
E
F
L
f
= 5 mA.
C
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
Bridge Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Trio
= 25°C, Single Diode
Unconnected Pair
[1]
T
C
= 25°C
[2]
[4]
[4]
Breakdown
[3]
I
Minimum
R
Voltage
V
= 10 mA
BR
20
(V)
Unit
Amp
V
°C
°C
°C/W
Maximum
I
F
Forward
Voltage
V
= 1 mA
F
410
(mV)
Maximum
1.0
Forward
Voltage
V
I
F
F
(mA)
(V) @
SOT-23/SOT-143
1
Same as V
150
‑65 to 150
500
35
200
Maximum
Leakage
I
Reverse
R
V
BR
(nA) @
R
(V)
15
Capacitance
Maximum
f = 1 MHz
V
C
F
T
1.2
SOT-323/SOT-363
1
Same as V
150
‑65 to 150
150
= 0 V
(pF)
Resistance
BR
I
Dynamic
F
R
Typical
= 5 mA
D
15
(Ω)
[5]