HSMS-2850-TR1G Avago Technologies US Inc., HSMS-2850-TR1G Datasheet - Page 3

DIODE SCHOTTKY DETECT SS SOT-143

HSMS-2850-TR1G

Manufacturer Part Number
HSMS-2850-TR1G
Description
DIODE SCHOTTKY DETECT SS SOT-143
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMS-2850-TR1G

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
2V
Capacitance @ Vr, F
0.3pF @ 1V, 1MHz
Configuration
Single
Frequency Range
UHF
Maximum Diode Capacitance
0.3 pF (Typ)
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Maximum Forward Voltage
0.25 V @ 1 mA
Mounting Style
SMD/SMT
Typical Voltage Sensitivity
40 mV/uW @915MHz
Capacitance Ct
0.3pF
Diode Case Style
SOT-323
Forward Voltage
150mV
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Diode Configuration
Single
Forward Current If Max
1mA
Forward Voltage Vf Max
250mV
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-1821-2
HSMS-2850-TR1G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSMS-2850-TR1G
Manufacturer:
AVAGO
Quantity:
3 132
Part Number:
HSMS-2850-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Absolute Maximum Ratings, T
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
2. T
Equivalent Linear Circuit Model
HSMS-285x chip
R
C
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
3
b
s
S
Symbol
j
j
= externally applied bias current in amps
= saturation current (see table of SPICE parameters)
=
device.
made to the circuit board.
= junction capacitance (see Table of SPICE parameters)
T
= series resistance (see Table of SPICE parameters)
T
P
θ
C
T
STG
OP
IV
jc
J
= +25°C, where T
8.33 X 10
R
I
S
b
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
+ I
s
Parameter
-5
nT
C
is defined to be the temperature at the package pins where contact is
R
C
j
j
C
[2]
= +25°C, Single Diode
°C/W
Unit
°C
°C
°C
V
SOT-23/143
-65 to 150
-65 to 150
150
500
2.0
Absolute Maximum
SOT-323/363
-65 to 150
-65 to 150
150
150
2.0
[1]
SPICE Parameters
Parameter
ESD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
P
P
T
B
C
E
I
B
R
(XTI)
M
I
N
BV
(V
S
J0
V
G
S
J
)
Units
pF
eV
Ω
V
A
A
V
HSMS-285x
3 E -4
3 E-6
0.18
0.69
1.06
0.35
3.8
0.5
25
2

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