BAP50-04W,115 NXP Semiconductors, BAP50-04W,115 Datasheet - Page 3

• Manufacturer Part Number: BAP50-04W,115
• Description: DIODE PIN GP 50V 50MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP50-04W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 1.05 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.5 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.05us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1918-2; 934056532115; BAP50-04W T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Jan 29
Per diode
V
V
I
C
r

L
R
SYMBOL
SYMBOL
j
R
D
L
S
= 25 C unless otherwise specified.
F
R
General purpose PIN diode
d
th j-s
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
I
I
V
V
V
when switched from I
I
V
I
I
I
R
F
R
F
F
F
F
R
R
R
R
L
PARAMETER
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz
= 10 A
= 100 ; measured at I
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
3
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;

50









MIN.
VALUE
250
0.95


0.45
0.35
0.30
25
14
3
1.05
1.60
TYP.
BAP50-04W
Product specification
1.1

100

0.6
0.5
40
25
5


MAX.
UNIT
K/W
V
V
nA
pF
pF
pF



s
nH
UNIT