BAP63-05W,115 NXP Semiconductors, BAP63-05W,115 Datasheet - Page 4

• Manufacturer Part Number: BAP63-05W,115
• Description: DIODE PIN 50V 100MA SOT-323
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP63-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Anode
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF or SHF
• Termination Style: SMD/SMT
• Carrier Life: 0.31 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.35 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohms
• Maximum Series Resistance @ Minimum If: 3.5 Ohms
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 310ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1928-2; 934056543115; BAP63-05W T/R

NXP Semiconductors
GRAPHICAL DATA
2001 May 18
handbook, halfpage
handbook, halfpage
Silicon PIN diode
|
f = 100 MHz; T
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
s 21
(dB)
Fig.2
amb
(1) I
(2) I
−0.1
−0.2
−0.3
−0.4
−0.5
(Ω)
10
r D
|
2
= 25 C.
10
−1
0
10
1
F
F
0
−1
= 100 mA.
= 10 mA.
Insertion loss (s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
(1)
(2)
1
1
(3) I
(4) I
(3)
(4)
21
F
F
= 0.5 mA.
= 1 mA.

2
) of the diode in on-state
10
2
f (GHz)
I F (mA)
MGW134
MGW126
10
3
2
4
handbook, halfpage
handbook, halfpage
Fig.5
|
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
s 21
(fF)
(dB)
C d
amb
−10
−20
−30
−40
500
400
300
200
100
|
2
= 25 C.
0
0
0
0
Isolation (s
function of frequency; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
21
1

2
) of the diode in off-state as a
8
12
2
BAP63-05W
Product specification
f (GHz)
16
V R (V)
MGW135
MGW133
20
3