BAP65-02,115 NXP Semiconductors, BAP65-02,115 Datasheet - Page 3

• Manufacturer Part Number: BAP65-02,115
• Description: DIODE PIN 30V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Carrier Life: 0.17 us
• Forward Voltage Drop: 0.9 V
• Maximum Diode Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1937-2; 934056546115; BAP65-02 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
V
I
C
r
L
R
j
s
s
s
s
s
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th j-s
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
Rev. 04 - 8 January 2008
I
V
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
R
= 50 mA
= 1 mA; f = 100 MHz
= 5 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 5 mA; f = 900 MHz
= 5 mA; f = 1800 MHz
= 5 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 20 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 3 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.9
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
0.17
0.6
TYP.
VALUE
85
1.1
20
0.9
0.8
0.95
0.9
Product specification
MAX.
BAP65-02
UNIT
K/W
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
3 of 7
s
UNIT