LM193AJ/883 National Semiconductor, LM193AJ/883 Datasheet - Page 4

Comparator Dual ±18V/36V 8-Pin CDIP Rail

LM193AJ/883

Manufacturer Part Number
LM193AJ/883
Description
Comparator Dual ±18V/36V 8-Pin CDIP Rail
Manufacturer
National Semiconductor
Datasheets

Specifications of LM193AJ/883

Package
8CDIP
Typical Response Time
1.3 us
Typical Response Time Range
0.5 to 5 us
Typical Voltage Gain Range
90 to 110 dB
Output Type
Open Collector
Number Of Channels Per Chip
2
Minimum Single Supply Voltage
2 V
Power Supply Type
Single|Dual
Number Of Elements
2
Technology
Bipolar
Input Offset Voltage
2mV
Input Bias Current (typ)
1nA
Response Time
1.3us
Single Supply Voltage (typ)
3/5/9/12/15/18/24/28V
Dual Supply Voltage (typ)
±3/±5/±9/±12/±15V
Supply Current (max)
1@5VmA
Power Supply Requirement
Single/Dual
Common Mode Rejection Ratio
60dB
Voltage Gain In Db
106.02dB
Power Supply Rejection Ratio
60dB
Single Supply Voltage (min)
2V
Single Supply Voltage (max)
36V
Dual Supply Voltage (min)
±1V
Dual Supply Voltage (max)
±18V
Power Dissipation
780mW
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
8
Package Type
CDIP
Lead Free Status / Rohs Status
Not Compliant

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Supply Current
Voltage Gain
Large Signal Response
Time
Response Time
Output Sink Current
Saturation Voltage
Output Leakage Current
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Common Mode
Voltage Range
Saturation Voltage
Output Leakage Current
Differential Input Voltage
Electrical Characteristics
(V
Electrical Characteristics
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Common Mode
Voltage Range
Saturation Voltage
Output Leakage Current
Differential Input Voltage
Electrical Characteristics
(V+ = 5V) (Note 4)
Note 1: For operating at high temperatures, the LM393 and LM2903 must be derated based on a 125˚C maximum junction temperature and a thermal resistance
of 170˚C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The LM193/LM193A/LM293 must be derated based on
a 150˚C maximum junction temperature. The low bias dissipation and the “ON-OFF” characteristic of the outputs keeps the chip dissipation very small (P
provided the output transistors are allowed to saturate.
Note 2: Short circuits from the output to V
current is approximately 20 mA independent of the magnitude of V
Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
(V+ = 5V) (Note 4)
+
=5V, T
Parameter
Parameter
Parameter
A
= 25˚C, unless otherwise stated)
R
R
V
V
V
V
V
V
V
(Note 9)
I
I
Linear Range, V
(Note 5)
V
V
I
V
Keep All V
Used), (Note 8)
IN(+)
IN
SINK
O
IN
RL
RL
IN
IN
IN
L
L
+
IN
IN
≥15 kΩ, V
=
(+) or I
(−)=1V, V
(−)=1V, V
(−)=0, V
=30V (Note 6)
=TTL Logic Swing, V
= 1V to 11V
=5V, R
=5V, R
(−)=1V, V
(−)=0, V
−I
≤4 mA
IN(−)
+
can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
IN
(Note 9)
I
I
V
V
V
V
Keep All V
L
L
Conditions
IN(+)
IN
, V
IN
(−) with Output in
IN
=5.1 kΩ
=5.1 kΩ (Note 7)
CM
+
IN
IN
IN(+)
+
(+) or I
’s≥0V (or V
V
V
IN
IN
=30V (Note 6)
Conditions
(+)=1V, V
(−)=1V, V
(−)=0, V
IN
=15V
CM
+
+
(+)=0, V
(+)=0, I
=0V (Note 5)
−I
(+)=0,
=5V
=36V
=1V, V
=0V
IN(−)
CM
(Continued)
IN
=0V
, V
IN
(−) with Output in Linear Range,
IN(+)
SINK
’s≥0V (or V
O
O
O
IN
CM
REF
≤1.5V
=5V
=30V
, if
(+)=0, I
=1V, V
≤4 mA
=0V
+
Conditions
=1.4V
.
SINK
O
=30V
Min Typ
, if Used), (Note 8)
0
≤4 mA
4
Min Typ
LM193
6.0
50 200
LM193
300
250
0.4
1.3
0.1
V
16
1
Max
+
100
300
700
1.0
36
−2.0
9
Max
400
2.5
1
Min Typ
LM293, LM393
0
Min Typ
6.0
50 200
LM293, LM393
Min
0
300
250
0.4
1.3
0.1
16
1
V
Max
+
150
400
700
1.0
36
−2.0
9
Max
400
LM193A
2.5
1
Typ
Min Typ
0
Min Typ
6.0
25 100
LM2903
200
400
50
V
9
LM2903
+
300
250
0.4
1.5
0.1
Max
16
100
300
700
−2.0
4.0
1.0
1
36
V
Max
+
200
500
700
1.0
15
36
−2.0
Max
400
1.0
2.5
D
≤100 mW),
Units
mV
mV
nA
nA
µA
Units
V
V
Units
V/mV
mV
mV
nA
nA
µA
mA
mA
mA
mV
nA
ns
µs
V
V

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