NTB45N06LT4G ON Semiconductor, NTB45N06LT4G Datasheet - Page 5

• Manufacturer Part Number: NTB45N06LT4G
• Description: MOSFET N-CH 60V 45A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB45N06LT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 22.8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 45 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB45N06LT4GOS; NTB45N06LT4GOS; NTB45N06LT4GOSTR

1000
100
0.1
2800
2400
2000
1600
1200
4000
3600
3200
1000
10
800
400
100
1
0.10
10
0
10
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
C
GS
C
C
V
I
V
Figure 9. Resistive Switching Time Variation
D
V
iss
rss
V
DS
GS
= 25°C
DS
= 45 A
= 15 V
DS
= 5 V
= 30 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
= 0 V
Figure 7. Capacitance Variation
V
R
Thermal Limit
Package Limit
GS
DS(on)
R
Safe Operating Area
t
t
0
d(off)
d(on)
G
1
vs. Gate Resistance
, GATE RESISTANCE (W)
V
t
t
V
Limit
r
f
DS
GS
dc
10 ms
= 0 V
5
(VOLTS)
10
1 ms
10
C
C
C
10
100 ms
oss
iss
rss
15
NTP45N06L, NTB45N06L
T
J
20
= 25°C
http://onsemi.com
100
100
25
5
280
240
200
160
120
48
40
32
24
16
80
40
6
5
4
3
2
1
0
8
0
0
0.6
0
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
V
T
0.64
Drain−to−Source Voltage vs. Total Charge
T
Q
V
J
I
GS
D
J
1
SD
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
= 45 A
50
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
4
0.68
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
g
0.72
, TOTAL GATE CHARGE (nC)
75
8
0.76
100
0.8
Q
Q
12
2
T
0.84
125
16
0.88
I
T
D
0.92
J
V
= 45 A
150
= 25°C
20
GS
0.96
175
24
1