NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 3
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NTB25P06T4G
Manufacturer Part Number
NTB25P06T4G
Description
MOSFET P-CH 60V 27.5A D2PAK
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTB25P06.pdf
(6 pages)
Specifications of NTB25P06T4G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1680pF @ 25V
Power - Max
120W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.082 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
25 A
Power Dissipation
120000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.082Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±15V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTB25P06T4GOS
NTB25P06T4GOS
NTB25P06T4GOSTR
NTB25P06T4GOS
NTB25P06T4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTB25P06T4G
Manufacturer:
FREESCALE
Quantity:
760
Company:
Part Number:
NTB25P06T4G
Manufacturer:
ON
Quantity:
800
Company:
Part Number:
NTB25P06T4G
Manufacturer:
ON
Quantity:
12 500
0.15
0.05
1.75
1.25
0.75
50
45
40
35
30
25
20
15
10
0.2
0.1
1.5
0.5
5
0
0
1
0
−50
0
Figure 3. On−Resistance vs. Drain Current and
V
−V
I
V
GS
D
GS
−25
Figure 5. On−Resistance Variation with
DS
= −25 A
Figure 1. On−Region Characteristics
= −10 V
= −10 V
−9 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
2
10
V
J
GS
, JUNCTION TEMPERATURE (°C)
−I
0
= −10 V
D
, DRAIN CURRENT (AMPS)
25
Temperature
Temperature
4
20
T
T
T
J
J
J
= −55°C
= 125°C
= 25°C
50
−8 V
6
30
75
100
T
8
40
J
= 25°C
−7 V
−4.5 V
−5.5 V
−4.2 V
125
http://onsemi.com
−6 V
−5 V
NTB25P06
10
150
50
3
10000
0.095
0.085
0.075
0.065
1000
100
50
40
30
20
10
10
0
10
0
2
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
T
GS
−V
DS
J
−V
= 25°C
DS
= 0 V
≥ 10 V
GS
10
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
20
D
V
, DRAIN CURRENT (AMPS)
GS
20
4
= −10 V
Gate Voltage
vs. Voltage
T
T
V
J
J
GS
= 150°C
= 125°C
T
30
30
J
= −15 V
= −55°C
T
J
= 25°C
40
6
40
T
J
50
= 125°C
50
60
8