NTD5407NG ON Semiconductor, NTD5407NG Datasheet - Page 4

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NTD5407NG

Manufacturer Part Number
NTD5407NG
Description
MOSFET N-CH 40V 38A DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD5407NG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 32V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.026 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD5407NG
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD5407NG
Manufacturer:
ON/安森美
Quantity:
20 000
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1800
1200
100
600
10
1
0
10
1
V
I
V
C
C
D
DS
GS
V
rss
iss
= 38 A
DS
= 32 V
= 10 V
5
Figure 9. Resistive Switching Time
= 0 V
V
Figure 7. Capacitance Variation
GS
Variation vs. Gate Resistance
R
G
0
, GATE RESISTANCE (OHMS)
V
V
GS
DS
= 0 V
5
1000
10
10
100
0.1
10
C
1
0.1
rss
15
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
TYPICAL PERFORMANCE CURVES
C
GS
= 25°C
V
= 10 V
DS
20
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
= 25°C
http://onsemi.com
25
t
t
t
t
d(off)
d(on)
DS(on)
f
r
C
1
C
oss
iss
100
30
LIMIT
4
15
12
9
6
3
0
0
15
14
13
12
10
11
9
8
7
6
5
4
3
2
1
0
0.3
Q
GS
10
Figure 10. Diode Forward Voltage vs. Current
Drain−To−Source Voltage vs. Total Charge
V
T
J
GS
V
= 25°C
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and
Q
V
5
DS
G
, TOTAL GATE CHARGE (nC)
dc
10 ms
100 ms
1 ms
10 ms
Q
0.6
GD
100
QT
10
0.9
15
V
I
T
D
GS
J
= 36 A
= 25°C
20
35
28
21
14
7
0
1.2

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