NTD4856N-1G ON Semiconductor, NTD4856N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4856N-1G
• Description: MOSFET N-CH 25V 13.3A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4856N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2241pF @ 12V
• Power - Max: 1.33W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 mOhms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.8 A
• Power Dissipation: 2.14 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
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0.1
10
10
800
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200
1
1
0.1
1
0
0
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
DD
GS
C
GS
= 30 A
C
V
= 25°C
rss
DS
= 15 V
= 11.5 V
= 20 V
Figure 9. Resistive Switching Time
DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
C
C
iss
oss
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
R
5
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
Safe Operating Area
1
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
20
V
T
10 ms
100 ms
1 ms
10 ms
GS
dc
J
= 25°C
http://onsemi.com
t
t
t
t
= 0 V
d(off)
f
r
d(on)
100
100
25
5
200
180
160
140
120
100
30
25
20
15
10
80
60
40
20
12
10
5
0
0
0.2
8
6
4
2
0
25
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
Q
GS
J
V
1
4
= 25°C
SD
= 0 V
50
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
T
8
J
Q
0.4
, JUNCTION TEMPERATURE (°C)
Q
G
Voltage vs. Total Charge
2
, TOTAL GATE CHARGE (nC)
12
75
16
Q
100
0.6
T
20
24
125
28
V
GS
0.8
I
T
32
D
I
150
J
D
= 30 A
= 25°C
= 19 A
36
175
1.0
40