NTD4809N-1G ON Semiconductor, NTD4809N-1G Datasheet

NTD4809N-1G

Manufacturer Part Number

NTD4809N-1G

Description

MOSFET N-CH 30V 9A IPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD4809N-35G.pdf (8 pages)

Specifications of NTD4809N-1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

9 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

13nC @ 4.5V

Input Capacitance (ciss) @ Vds

1456pF @ 12V

Power - Max

1.3W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

9 m Ohms

Forward Transconductance Gfs (max / Min)

9 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

11.5 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4809N-1G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTD4809N-1G

Manufacturer:

ON/安森美

Quantity:

20 000

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NTD4809N

Power MOSFET

30 V, 58 A, Single N- -Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

June, 2010 - - Rev. 11

Continuous Drain

Current (R

Power Dissipation

Continuous Drain

Current (R

Power Dissipation

Continuous Drain

Current (R

(Note 1)

Power Dissipation

Pulsed Drain Current

Current Limited by Package

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain--to--Source Avalanche

Energy (V

L = 1.0 mH, I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Drain--to--Source Voltage

Gate--to--Source Voltage

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These are Pb- -Free Devices

CPU Power Delivery

DC- -DC Converters

Low Side Switching

θJA

θJC

) (Note 1)

) (Note 2)

) (Note 1)

DS(on)

θJA

θJC

L(pk)

= 24 V, V

) (Note 1)

) (Note 2)

)

to Minimize Conduction Losses

Parameter

= 13.5 A, R

= 10 V,

Steady

State

=10ms

= 25°C unless otherwise noted)

= 25 Ω)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DmaxPkg

dV/dt

, T

DSS

stg

-- 55 to

Value

20

11.5

91.0

130

175

260

9.0

2.0

9.0

7.0

1.3

6.0

V/ns

Unit

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

Drain

Drain 3

(BR)DSS

STYLE 2

30 V

DPAK

Source

ORDERING INFORMATION

4809N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

http://onsemi.com

Gate

9.0 mΩ @ 10 V

14 mΩ @ 4.5 V

(Straight Lead)

CASE 369AD

= Year

= Work Week

= Pb--Free Package

Drain

DS(on)

Drain

IPAK

2 3

Publication Order Number:

Source

MAX

Gate

N- -Channel

(Straight Lead

CASE 369D

NTD4809N/D

Drain

DPAK)

IPAK

58 A

MAX

Source

Related parts for NTD4809N-1G

NTD4809N-1G Summary of contents

Page 1

... CASE 369AD CASE 369D IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4809N = Device Code G = Pb--Free Package ORDERING INFORMATION Publication Order Number: NTD4809N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient -- Steady State (Note 1) Junction--to--Ambient -- Steady State (Note 2) 1. Surface--mounted on FR4 board using pad size Cu. 2. Surface--mounted on FR4 board using ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN- -SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance (T = 25°C unless otherwise ...

Page 4

110 6.5 V 5.5 V 100 DRAIN--TO--SOURCE VOLTAGE (VOLTS) DS Figure 1. On- -Region Characteristics 0.045 0.040 0.035 0.030 ...

Page 5

iss 2000 1500 C 1000 rss 500 C rss GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...

Page 6

... ORDERING INFORMATION Order Number NTD4809NT4G NTD4809N--1G NTD4809N--35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 25°C 100°C 125°C ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ° SOLDERING FOOTPRINT* 6 ...

Page 8

... R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 ------ 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4809N/D ...

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