NTY100N10G ON Semiconductor, NTY100N10G Datasheet - Page 8

• Manufacturer Part Number: NTY100N10G
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
3
3 PL
W
0.25 (0.010)
U
Q
M
P
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T B
0.25 (0.010)
A
K
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N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
M
TO−3BPL (TO−264)
T B
http://onsemi.com
CASE 340G−02
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NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
ANSI Y14.5M, 1982.
STYLE 1:
DIM
W
A
B
C
D
E
G
H
K
N
P
Q
R
U
PIN 1. GATE
F
J
L
2. DRAIN
3. SOURCE
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MILLIMETERS
MIN
28.0
19.3
0.93
0.43
17.6
4.7
1.9
2.2
2.6
2.2
3.1
2.8
5.45 BSC
4.35 REF
2.25 REF
11.2 REF
6.3 REF
MAX
29.0
20.3
1.48
0.78
18.8
5.3
2.1
2.4
3.0
2.6
3.5
3.2
1.102
0.760
0.185
0.037
0.075
0.087
0.102
0.017
0.693
0.087
0.122
0.110
MIN
0.215 BSC
0.411 REF
0.248 REF
0.172 REF
0.089 REF
INCHES
NTY100N10/D
1.142
0.800
0.209
0.058
0.083
0.102
0.031
0.740
0.102
0.137
0.125
MAX
0.118