NTP2955 ON Semiconductor, NTP2955 Datasheet - Page 4

• Manufacturer Part Number: NTP2955
• Description: MOSFET P-CH 60V 2.4A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP2955

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 196 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.156 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1200
1000
1000
1000
1100
900
800
700
600
500
400
300
200
100
100
100
0.1
10
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
1
1
−10
0.1
1
V
Figure 9. Resistive Switching Time Variation
DS
SINGLE PULSE
Figure 11. Maximum Rated Forward Biased
V
V
C
C
I
DD
GS
D
V
RSS
ISS
= −0 V
T
GS
= −12 A
−5
J
−V
= −30 V
= −10 V
= 25°C
= −10 V
−V
Figure 7. Capacitance Variation
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
0
G
Safe Operating Area
, GATE RESISTANCE (W)
1.0
−V
10 ms
1 ms
DS
R
THERMAL LIMIT
PACKAGE LIMIT
5
DS(on)
V
100 ms
C
10
GS
LIMIT
RSS
= −0 V
10
t
d(on)
C
C
OSS
ISS
10
t
d(off)
15
t
f
dc
T
t
10 ms
r
J
= 25°C
20
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100
25
100
4
12
10
8
6
4
2
0
0
250
200
150
100
14
12
10
50
Drain−to−Source Voltage versus Total Charge
8
6
4
2
0
0
T
V
25
0
J
DS
Q
= 25°C
GS
V
T
T
Figure 10. Diode Forward Voltage versus
Figure 12. Maximum Avalanche Energy
GS
versus Starting Junction Temperature
J
J
0.25
, STARTING JUNCTION TEMPERATURE (°C)
Figure 8. Gate−to−Source and
−V
= 25°C
Q
= −0 V
50
4
G
SD
, TOTAL GATE CHARGE, (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
0.5
Q
75
GD
Q
0.75
T
Current
8
I
D
100
1.0
= −12 A
1.25
125
12
1.5
V
I
D
GS
150
= −12 A
1.75
16
60
50
40
30
20
10
0
175
2.0