NTJS3151PT2 ON Semiconductor, NTJS3151PT2 Datasheet - Page 3

• Manufacturer Part Number: NTJS3151PT2
• Description: MOSFET P-CH 12V 2.7A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS3151PT2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 400mV @ 100µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 12V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.075
0.025
0.05
0.1
8
6
4
2
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
0
−50
Figure 3. On−Resistance vs. Drain Current and
V
GS
I
V
−V
D
GS
−2.4 V
Figure 1. On−Region Characteristics
= −3.3 A
−25
DS
= −4.5 V
1.5
Figure 5. On−Resistance Variation with
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
−I
T
V
J
V
D,
, JUNCTION TEMPERATURE (°C)
GS
0
GS
2.5
DRAIN CURRENT (AMPS)
= −4.5 V
= −3.4 V
TYPICAL PERFORMANCE CURVES
Temperature
25
2
Temperature
3.5
T
T
T
J
J
J
= 125°C
= 25°C
= −55°C
50
4.5
3
75
5.5
T
100
J
4
= 25°C
6.5
−1.4 V
−1.2 V
−1.6 V
http://onsemi.com
125
−2 V
7.5
5
150
3
100000
10000
1000
100
0.5
0.4
0.3
0.2
0.1
(T
0
8
6
4
2
0
0.5
J
0
Figure 4. On−Resistance vs. Drain Current and
0
= 25°C unless otherwise noted)
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
−V
0.5
−V
= 0 V
DS
≤ −12 V
1.5
25°C
GS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
1
125°C
D,
2.5
DRAIN CURRENT (AMPS)
1.5
4
V
Gate Voltage
GS
vs. Voltage
T
3.5
T
T
J
= −1.8 V
J
J
2
= −55°C
= 150°C
= 125°C
6
2.5
4.5
8
3
5.5
V
3.5
V
GS
GS
T
10
J
= −2.5 V
= −4.5 V
6.5
= 25°C
4
7.5
4.5
12