NTD50N03RT4G ON Semiconductor, NTD50N03RT4G Datasheet - Page 7

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NTD50N03RT4G

Manufacturer Part Number
NTD50N03RT4G
Description
MOSFET N-CH 25V 7.8A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD50N03RT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 30A, 11.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 11.5V
Input Capacitance (ciss) @ Vds
750pF @ 12V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
45 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD50N03RT4G
Manufacturer:
ON
Quantity:
32 500
Part Number:
NTD50N03RT4G
Manufacturer:
ON Semiconductor
Quantity:
135
Company:
Part Number:
NTD50N03RT4G
Quantity:
5 000
V
S
SEATING
PLANE
−T−
F
V
S
F
1
B
R
G
4
2
1
G
3
B
R
4
2
L
3
A
K
D
2 PL
A
K
D
0.13 (0.005)
0.13 (0.005)
3 PL
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
0.228
5.80
J
M
M
C
T
T
−T−
C
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
E
0.244
SEATING
PLANE
0.101
6.20
2.58
U
E
H
http://onsemi.com
CASE 369C−01
CASE 369D−01
NTD50N03R
ISSUE O
ISSUE B
DPAK
DPAK
7
0.118
3.0
0.063
1.6
SCALE 3:1
Z
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
G
H
K
R
E
F
J
S
V
Z
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
PER ANSI Y14.5M, 1982.
MIN
DIM
0.090 BSC
A
B
C
D
G
H
K
R
U
E
F
J
L
S
V
Z
INCHES
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MIN
MAX
0.180 BSC
0.090 BSC
−−−
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
MILLIMETERS
−−−
−−−
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
4.58 BSC
2.29 BSC
−−−
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−

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