NTD4815N-35G ON Semiconductor, NTD4815N-35G Datasheet - Page 2

• Manufacturer Part Number: NTD4815N-35G
• Description: MOSFET N-CH 35A 30V IPAK TRIMMED
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTD4815N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
I
C
G(TOT)
I
d(ON)
GS(TH)
C
G(TOT)
Q
DS(on)
Q
DSS
GSS
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
/
http://onsemi.com
J
V
V
V
GS
GS
GS
V
V
V
V
V
GS
= 4.5 V, V
= 0 V, f = 1.0 MHz, V
= 4.5 V, V
2
DS
V
GS
V
GS
V
GS
11.5 V
V
DS
GS
GS
= 10 V to
DS
= 24 V
= 4.5 V
= 11.5 V, V
= 0 V,
Test Condition
= 0 V, V
= V
= 0 V, I
= 15 V, I
R
I
G
D
DS
DS
DS
= 30 A
= 3.0 W
, I
= 15 V, I
D
GS
= 15 V; I
D
= 250 mA
D
DS
= 250 mA
= ±20 V
= 10 A
= 15 V;
T
T
I
J
I
I
I
D
J
D
D
D
DS
D
= 125°C
D
= 25 °C
= 15 A
= 30 A
= 15 A
= 30 A
= 15 A,
= 30 A
= 12 V
R
Symbol
qJC−TAB
R
R
R
qJC
qJA
qJA
Min
30
1.5
18.3
14.1
10.5
21.4
11.4
Typ
11.5
770
181
108
3.5
25
5.6
6.0
6.0
0.9
2.5
3.1
12
21
Value
119
4.6
3.5
78
±100
Max
10
2.5
6.6
15
25
1
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
nC
ns
nC
pF
V
V
S