NTD4810N-1G ON Semiconductor, NTD4810N-1G Datasheet - Page 4

MOSFET N-CH 30V 8.6A IPAK

NTD4810N-1G

Manufacturer Part Number
NTD4810N-1G
Description
MOSFET N-CH 30V 8.6A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4810N-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
1350pF @ 12V
Power - Max
1.28W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4810N-1G
Manufacturer:
ON
Quantity:
12 500
0.048
0.043
0.038
0.033
0.028
0.023
0.018
0.013
0.008
0.003
60
50
40
30
20
10
2.0
1.5
1.0
0.5
0
0
--50
0
3
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
--25
V
= 30 A
DS
V
Figure 1. On- -Region Characteristics
Figure 5. On- -Resistance Variation with
= 10 V
GS
4
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
6 V
1
, GATE--TO--SOURCE VOLTAGE (VOLTS)
10 V
T
J
0
, JUNCTION TEMPERATURE (°C)
5 V
4.5 V
5
25
2
Temperature
6
50
Voltage
T
4 V
J
= 25°C
75
7
3
TYPICAL PERFORMANCE CURVES
100
8
125
4
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
9
150
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
3 V
175
5
10
4
100,000
10,000
0.020
0.015
0.010
0.005
1000
100
10
60
50
40
30
20
10
0
0
10
5
0
Figure 4. On- -Resistance vs. Drain Current and
T
V
V
Figure 6. Drain- -to- -Source Leakage Current
J
GS
DS
= 25°C
15
V
V
DS
≥ 10 V
= 0 V
GS
Figure 2. Transfer Characteristics
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
20
10
I
D
, DRAIN CURRENT (AMPS)
25
vs. Drain Voltage
T
J
Gate Voltage
= 25°C
T
2
T
T
V
V
J
30
J
J
GS
GS
= 125°C
= 175°C
= 125°C
15
= 11.5 V
= 4.5 V
35
3
T
J
40
= --55°C
20
45
4
50
55
25
5

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