NTB45N06G ON Semiconductor, NTB45N06G Datasheet - Page 4

• Manufacturer Part Number: NTB45N06G
• Description: MOSFET N-CH 60V 45A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB45N06G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1725pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohms
• Forward Transconductance Gfs (max / Min): 16.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB45N06G; NTB45N06GOS

1000
1000
100
0.1
3200
2800
2400
2000
1600
1200
100
3600
10
10
800
400
1
0.10
1
0
1
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
V
I
V
D
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
GS
C
C
C
DS
GS
V
= 45 A
= 25°C
iss
rss
DS
V
= 20 V
= 30 V
= 10 V
DS
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
t
f
r
Figure 7. Capacitance Variation
V
GS
R
Thermal Limit
Package Limit
t
DS(on)
t
R
d(on)
Safe Operating Area
d(off)
vs. Gate Resistance
0
G
1
, GATE RESISTANCE (W)
V
V
GS
DS
Limit
dc
10 ms
= 0 V
5
(VOLTS)
10
1 ms
10
100 ms
C
C
C
10
iss
oss
rss
15
NTP45N06, NTB45N06
T
J
= 25°C
http://onsemi.com
20
100
100
25
4
280
240
200
160
120
12
10
50
40
30
20
10
80
40
8
6
4
2
0
0
0
0.6
0
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
V
T
0.64
Drain−to−Source Voltage vs. Total Charge
Q
J
I
GS
D
4
1
T
= 25°C
V
= 45 A
J
SD
= 0 V
0.68
50
, STARTING JUNCTION TEMPERATURE (°C)
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
Figure 8. Gate−to−Source and
8
0.72
Q
g
, TOTAL GATE CHARGE (nC)
12
75
0.76 0.8
Q
2
Q
16
T
100
0.84 0.88
20
125
24
V
GS
0.92
28
I
T
0.96
D
150
J
= 45
= 25°C
32
1
1.04
175
36