BS108G ON Semiconductor, BS108G Datasheet

BS108G

Manufacturer Part Number

BS108G

Description

MOSFET N-CH 200V 250MA TO-92

Manufacturer

ON Semiconductor

Datasheet

1.BS108ZL1G.pdf (3 pages)

Specifications of BS108G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 Ohm @ 100mA, 2.8V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

250mA

Vgs(th) (max) @ Id

1.5V @ 1mA

Input Capacitance (ciss) @ Vds

150pF @ 25V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

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BS108

Small Signal MOSFET

250 mAmps, 200 Volts,

Logic Level

N-Channel TO-92

applications such as line drivers, relay drivers, CMOS logic,

microprocessor or TTL to high voltage interface and high voltage

display drivers.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The Power Dissipation of the package may result in a lower continuous drain

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb-Free strategy and soldering details, please

October, 2007 - Rev. 3

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain - Source Voltage

Gate-Source Voltage

Drain Current

Continuous (Note 1)

Pulsed (Note 2)

Total Power Dissipation

@ T

Derate above T

Operating and Storage Temperature Range

This MOSFET is designed for high voltage, high speed switching

many Devices

Low Drive Requirement, V

Inherent Current Sharing Capability Permits Easy Paralleling of

AEC Qualified

PPAP Capable

Pb-Free Packages are Available*

current.

= 25°C

Rating

Preferred Device

= 3.0 V max

Symbol

DSS

, T

stg

-55 to +150

Value

200

±20

250

500

350

6.4

mW/°C

mAdc

Unit

Vdc

°C

Preferred devices are recommended choices for future use

and best overall value.

BS108

BS108G

BS108ZL1

BS108ZL1G

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

BS108 = Device Code

http://onsemi.com

250 mAMPS

200 VOLTS

CASE 29-11

(Pb-Free)

DS(on)

Package

STYLE 30

= Assembly Location

= Year

= Work Week

= Pb-Free Package

TO-92

N-Channel

Publication Order Number:

= 8 W

2000/Ammo Pack

1000 Units/Box

MARKING

DIAGRAM

Shipping

YWW G

BS108

BS108/D

Related parts for BS108G

BS108G Summary of contents

Page 1

... GS mAdc I 250 D I 500 350 mW 6.4 mW/°C ° -55 to +150 J stg BS108 BS108G BS108ZL1 BS108ZL1G Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 250 mAMPS 200 VOLTS = DS(on) N-Channel MARKING DIAGRAM A BS108 YWW G G TO-92 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage = 10 mA Zero Gate Voltage Drain Current (V = 130 Vdc DSS GS Gate-Body Leakage Current ( Vdc ...

Page 3

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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