BS107ARL1 ON Semiconductor, BS107ARL1 Datasheet - Page 2

MOSFET N-CH 200V 250MA TO-92

BS107ARL1

Manufacturer Part Number
BS107ARL1
Description
MOSFET N-CH 200V 250MA TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BS107ARL1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.4 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
350mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS107ARL1G
Manufacturer:
MICROCHIP
Quantity:
1 001
Part Number:
BS107ARL1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BS107ARL1G
Quantity:
956
Product Discontinuance #16083
PLEASE NOTE: ON Semiconductor may implement minimum order quantities or
dollar amounts based on inventories available. Also, Devices on this
Product Discontinuance become NCNR (Non-Cancelable, Non-Returnable).
For questions or concerns regarding this notification, please contact your
local sales office or customer service representative.
Additional contacts are:
Americas:
Elizabeth Becker (email is Elizabeth.Becker@onsemi.com)
602.244.7248
USA
Europe:
Herve Marchionini (email is herve.marchionini@onsemi.com)
49.89.930.808.36 or 1.602.244.4170
France
Japan & Asia Pacific:
Nobuyuki Otake (email is nobuyuki.otake@onsemi.com)
81.241.27.5460
Japan
NOTE: SUBSEQUENT TO PUBLISHING A DISCONTINUANCE NOTICE,
NOTE: TO ALLOW AN ORDERLY EXIT FROM THE MARKET, PRODUCT SHALL NOT BE
Issue Date: 03 Jan 2008
ON SEMICONDUCTOR WILL ALLOW SIX (6) MONTHS FROM THE
ANNOUNCEMENT DATE TO PLACE FINAL LIFETIME PURCHASE ORDERS.
DELIVERED AFTER TWELVE (12) MONTHS BEYOND THE ANNOUNCEMENT DATE.
End of life buy orders must be placed before July 31 2008
and End of life buy orders must be shipped before Dec 31 2008
Rev.08-24-05
Page 2 of 26

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