NTP13N10 ON Semiconductor, NTP13N10 Datasheet - Page 3

• Manufacturer Part Number: NTP13N10
• Description: MOSFET N-CH 100V 13A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP13N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 64.7W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTP13N10OS

2.5
1.5
0.5
0.4
0.3
0.2
0.1
0.5
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
3
2
1
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
7.5 V
2
−25
V
V
I
V
1
GS
Figure 5. On−Resistance Variation with
D
DS
GS
= 6.5 A
8 V
4
Figure 1. On−Region Characteristics
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
9 V
= 10 V
T
2
J
0
V
6
, JUNCTION TEMPERATURE (°C)
I
GS
D
, DRAIN CURRENT (AMPS)
3
= 10 V
8
25
and Temperature
10
T
Temperature
4
J
T
= 100°C
T
50
J
12
J
= −55°C
= 25°C
5
14
75
6
16
100
7 V
18
7
20
125
T
8
J
22
= 25°C
4.5 V
6.5 V
5.5 V
6 V
150
5 V
http://onsemi.com
9
24
175
10
26
3
10,000
0.175
0.125
1000
0.15
0.2
0.1
100
26
24
22
18
16
14
12
20
10
10
8
6
4
2
0
0
0
20
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
2
DS
T
GS
J
1
V
V
30
= 25°C
≥ 10 V
GS
DS
= 0 V
4
Figure 2. Transfer Characteristics
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
J
2
= 100°C
6
T
I
40
V
D
J
GS
, DRAIN CURRENT (AMPS)
= 25°C
3
8
and Gate Voltage
= 10 V
versus Voltage
10
50
T
T
4
J
J
= 150°C
12
= 100°C
60
5
V
14
GS
T
J
= 15 V
= −55°C
16
6
70
18
7
80
20 22 24
8
90
9
100
26
10