MTP2955V ON Semiconductor, MTP2955V Datasheet - Page 2

• Manufacturer Part Number: MTP2955V
• Description: MOSFET P-CH 60V 12A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP2955V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP2955VOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage (Note 1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(V
Temperature Coefficient (Positive)
(V
(V
(V
Threshold Temperature Coefficient (Negative)
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 0.25 mAdc)
GS
GS
= 6.0 Adc)
= 12 Adc)
= 6.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
C
pk
DS
=
GS
= 10 Vdc, I
J
J
= ± 15 Vdc, V
Max limit − Typ
Characteristic
= 150°C)
= 150°C)
3 x SIGMA
(V
(V
(I
(T
DS
DS
S
J
= 12 Adc, V
D
= 48 Vdc, I
= 25°C unless otherwise noted)
= 25 Vdc, V
= 6.0 Adc)
(V
V
(I
(I
DS
DD
GS
S
S
= 12 Adc, V
= 12 Adc, V
= 0 Vdc)
dI
= 30 Vdc, I
= 10 Vdc, R
S
/dt = 100 A/ms)
D
GS
GS
http://onsemi.com
= 12 Adc, V
(Cpk ≥ 2.0) (Note 3)
(Cpk ≥ 2.0) (Note 3)
(Cpk ≥ 1.5) (Note 3)
= 0 Vdc, T
= 0 Vdc, f = 1.0 MHz)
GS
GS
D
G
= 12 Adc,
= 0 Vdc)
= 0 Vdc,
= 9.1 W)
2
GS
J
= 150°C)
= 10 Vdc)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
t
FS
t
SD
RR
iss
rss
rr
a
b
r
f
D
S
T
1
2
3
Min
2.0
3.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.185
0.53
Typ
550
200
115
2.8
5.0
5.0
4.0
9.0
7.0
1.8
1.5
4.5
7.5
58
50
15
50
24
39
19
90
25
−
−
−
−
−
−
0.230
Max
100
100
700
280
100
100
4.0
2.9
2.5
3.0
10
30
50
80
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W