MTP23P06V ON Semiconductor, MTP23P06V Datasheet - Page 3

• Manufacturer Part Number: MTP23P06V
• Description: MOSFET P-CH 60V 23A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP23P06V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Forward Transconductance Gfs (max / Min): 11.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP23P06VOS

0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
50
40
30
20
10
0
1
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
T
J
V
= 25°C
V
I
D
−25
GS
GS
Figure 5. On−Resistance Variation with
5
= 11.5 A
Figure 1. On−Region Characteristics
= 10 V
= 10 V
V
DS
2
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
T
J
, JUNCTION TEMPERATURE (°C)
V
I
D
GS
, DRAIN CURRENT (AMPS)
15
25
and Temperature
= 10V
Temperature
4
T
J
= 100°C
20
50
25°C
− 55°C
9 V
25
75
TYPICAL ELECTRICAL CHARACTERISTICS
6
100
30
125
35
8
8 V
7 V
6 V
5 V
4 V
http://onsemi.com
150
40
MTP23P06V
175
10
45
3
0.105
0.095
0.085
0.115
0.12
0.09
0.08
0.11
100
0.1
40
35
30
25
20
15
10
10
5
0
1
0
0
2
Figure 4. On−Resistance versus Drain Current
T
V
V
J
GS
DS
= 25°C
5
= 0 V
≥ 10 V
Figure 6. Drain−To−Source Leakage
10
Figure 2. Transfer Characteristics
3
V
V
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Current versus Voltage
I
15
D
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
4
20
T
V
J
GS
= 125°C
= 10 V
15 V
30
25
5
30
T
25°C
J
40
= −55°C
6
35
40
50
7
100°C
45
60
50
8