MTP2P50E ON Semiconductor, MTP2P50E Datasheet - Page 2

• Manufacturer Part Number: MTP2P50E
• Description: MOSFET P-CH 500V 2A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP2P50E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 6 Ohms
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP2P50EOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
INTERNAL PACKAGE INDUCTANCE
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 8)
Forward On−Voltage (Note 1)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(V
Temperature Coefficient (Positive)
(V
(V
(V
Temperature Coefficient (Negative)
(I
(I
D
D
GS
DS
DS
DS
= 2.0 Adc)
= 1.0 Adc, T
= 0 Vdc, I
= 500 Vdc, V
= 500 Vdc, V
= V
GS
, I
D
D
= 250 mAdc)
J
= 250 mAdc)
= 125°C)
GS
GS
= 0 Vdc)
= 0 Vdc, T
GS
DS
GS
= 10 Vdc)
= 15 Vdc, I
= ± 20 Vdc, V
Characteristic
J
= 125°C)
GS
(I
(T
= 10 Vdc, I
S
J
D
= 2.0 Adc, V
= 25°C unless otherwise noted)
(V
(V
= 1.0 Adc)
(V
(I
(I
V
DS
DD
DS
S
DS
S
GS
= 2.0 Adc, V
= 2.0 Adc, V
= 0)
= 400 Vdc, I
= 250 Vdc, I
= 25 Vdc, V
dI
= 10 Vdc, R
D
V
S
f = 1.0 MHz)
= 1.0 Adc)
GS
/dt = 100 A/ms)
GS
http://onsemi.com
= 10 Vdc)
= 0 Vdc, T
GS
GS
D
GS
D
G
= 2.0 Adc,
= 2.0 Adc,
= 9.1 W)
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
2
J
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
t
FS
t
SD
RR
iss
rss
rr
a
b
r
f
D
S
T
1
2
3
Min
500
2.0
0.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.85
1.92
Typ
564
845
100
223
161
3.0
4.0
4.5
9.5
3.7
7.9
9.9
2.3
3.5
4.5
7.5
26
12
14
21
19
19
62
−
−
−
−
−
−
1183
Max
14.4
12.6
100
100
140
4.0
6.0
3.5
10
52
24
28
42
38
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W