VN2406L ON Semiconductor, VN2406L Datasheet - Page 2

• Manufacturer Part Number: VN2406L
• Description: MOSFET N-CH 240V 200MA TO-92
• Manufacturer: ON Semiconductor

Specifications of VN2406L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 125pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: VN2406LOS

1. Pulse Test; Pulse Width < 300 μs, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Drain −Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate− Body Leakage
Gate Threshold Voltage
On−State Drain Current (Note 1)
Drain−Source On Resistance (Note 1)
Forward Transconductance (Note 1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Time
Turn−Off Time
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
DS
GS
GS
GS
DS
= 0, I
= 120 Vdc, V
= 120 Vdc, V
= 0, V
= V
= 10 V, V
= 2.5 V, I
= 10 V, I
= 10 V, I
GS
D
GS
, I
= 100 μA)
D
D
D
D
= ±15 V)
DS
= 1.0 mA)
= 0.5 A)
= 0.5 A)
= 0.1 A)
≥ 2.0 V
GS
GS
= 0)
= 0, T
DS(on)
A
= 125°C)
)
Characteristic
(V
f = 1.0 MHz)
(V
R
L
DS
DD
(T
= 150 Ω, R
A
= 25 Vdc, V
= 60 Vdc, I
= 25°C unless otherwise noted)
G
= 25 Ω)
D
GS
= 0.4 A,
http://onsemi.com
= 0,
2
V
Symbol
V
r
(BR)DSS
I
DS(on)
C
I
I
C
C
t
t
GS(th)
D(on)
DSS
GSS
(on)
t
(off)
g
t
oss
(r)
(f)
rss
iss
fs
Min
240
300
0.8
1.0
−
−
−
−
−
−
−
−
−
−
−
−
±100
Max
125
500
8.0
8.0
2.0
6.0
50
20
23
34
10
10
−
−
−
μAdc
nAdc
Unit
Vdc
Vdc
Adc
mS
pF
pF
pF
ns
ns
ns
ns
Ω