MPF960 ON Semiconductor, MPF960 Datasheet - Page 2

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MPF960

Manufacturer Part Number
MPF960
Description
MOSFET N-CH 60V 2A TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPF960

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.7 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
3.5V @ 1mA
Input Capacitance (ciss) @ Vds
70pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
MPF960OS
2. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Reverse Current (V GS = 15 Vdc, V DS = 0)
Zero–Gate–Voltage Drain Current
Gate Threshold Voltage
Drain–Source On–Voltage (V GS = 10 Vdc)
Static Drain–Source On Resistance
On–State Drain Current
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
Turn–On Time
Turn–Off Time
(V GS = 0, I D = 10 Adc)
(V DS = Maximum Rating, V GS = 0)
(I D = 1.0 mAdc, V DS = V GS )
(I D = 0.5 Adc)
(I D = 1.0 Adc)
(I D = 2.0 Adc)
(V GS = 10 Vdc, I D = 1.0 Adc)
(V DS = 25 Vdc, V GS = 10 Vdc)
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
(V DS = 25 Vdc, I D = 0.5 Adc)
(Note 2.)
Characteristic
(T A = 25 C unless otherwise noted)
MPF930, MPF960, MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
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2
V (BR)DSX
V GS(Th)
V DS(on)
Symbol
r DS(on)
I D(on)
I GSS
I DSS
C oss
C rss
C iss
g fs
t on
t off
Min
200
1.0
1.0
35
60
90
Typ
380
0.4
0.6
0.6
0.9
1.2
1.2
2.2
2.8
2.8
0.9
1.2
1.2
2.0
7.0
7.0
70
20
49
Max
3.5
0.7
0.8
1.2
1.4
1.7
2.4
3.0
3.5
4.8
1.4
1.7
2.0
50
10
15
15
mmhos
Amps
nAdc
Unit
Vdc
Vdc
Vdc
Adc
pF
pF
pF
ns
ns

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