TPCS8105(TE12L,Q,M Toshiba, TPCS8105(TE12L,Q,M Datasheet

TPCS8105(TE12L,Q,M

Manufacturer Part Number

TPCS8105(TE12L,Q,M

Description

MOSFET P-CH 30V 10A 2-3R1F

Manufacturer

Toshiba

Datasheet

1.TPCS8105TE12LQM.pdf (7 pages)

Specifications of TPCS8105(TE12L,Q,M

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

13.5 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

10A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

107nC @ 10V

Input Capacitance (ciss) @ Vds

5710pF @ 10V

Power - Max

600mW

Mounting Type

Surface Mount

Package / Case

2-3R1F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to small and thin package

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

(Note 2a) (Note 4)

Pulse (Note 1)

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

= −0.8 to −2.0 V (V

(Note 1)

(Note 3)

= −10 µA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

TPCS8105

DGR

GSS

DSS

stg

| = 23 S (typ.)

= 9.6 mΩ (typ.)

= −10 V, I

= −30 V)

−55 to 150

Rating

0.11

−30

±20

−10

−40

−10

150

1.1

0.6

= −1 mA)

Unit

°C

Weight: 0.035 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3

5,6,7,8 Drain

Gate

Source

2-3R1F

TPCS8105

2006-11-16

―

Unit: mm

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TPCS8105(TE12L,Q,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristics Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Marking (Note 5) S8105 A line indicates Lot No. lead (Pb)-free package or lead (Pb)-free ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...

Page 4

I – −10 −10 −2.5 −2.4 Common source Ta = 25°C −5 Pulse test −3 −8 −2.6 −2.3 −6 −2.2 − −2 V −2 0 −0.2 −0.4 −0.6 −0.8 0 Drain−source voltage V (V) ...

Page 5

R – (ON) 20 Common source −11 A Pulse test 16 − − −4 V −2.5 − − −80 −40 ...

Page 6

Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value ...

Page 7

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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