2SK2231(Q) Toshiba, 2SK2231(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK2231(Q)
• Description: MOSFET N-CH 60V 5A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2231(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2231QT

As a result of reliability check, we confirmed that there is no problem.
Ｉ
V
MIN:
h
V
MIN: 70
ＣＢＯ
CB
FE(1)
CE
=100V
=1V
1E-10
1E-11
500
400
300
200
100
1E-5
1E-6
1E-7
1E-8
1E-9
0
1E-11
0
Reliability data (Extract) Representative product type 2SC3303
High-Temperature Reverse Bias Test
信頼性確認データ (抜粋） 代表品種 2SC3303
高温逆バイアス試験
1E-10
100
Initial
Initial
1E-9
200
1E-8
I
MAX: 1
IC=1A
MAX: 240
E
=0
300
UNIT
UNIT
1E-7
400
1E-6
： UA
：
1E-5
500
I
V
MIN:
V
I
MIN:
ＥＢＯ
EB
CE(sat)
C
=3A
=7V
1E-10
1E-6
1E-7
1E-8
1E-9
0.8
0.6
0.4
0.2
1
0
1E-10
0
0.2
1E-9
Initial
Initial
0.4
1E-8
I
MAX: 1
I
MAX: 0.4
C
B
=0
=0.15A
UNIT
UNIT
0.6
1E-7
0.8
： UA
： V
1E-6
1
V
I
MIN:
(BR)CEO
C
=10mA
150
130
110
90
70
50
50
80
70
Initial
90
I
MAX:
B
110
=0
UNIT
130
： V
150