TPCF8B01(TE85L) Toshiba, TPCF8B01(TE85L) Datasheet - Page 3
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TPCF8B01(TE85L)
Manufacturer Part Number
TPCF8B01(TE85L)
Description
MOSFET P-CH 20V 2.7A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8B01TE85LF.pdf
(9 pages)
Specifications of TPCF8B01(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
1.35W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8B01(TE84L)
TPCF8B01TR
TPCF8B01TR
Electrical Characteristics
MOSFET
MOSFET Source-Drain Ratings and Characteristics
SBD
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Characteristics
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
R
Symbol
Symbol
Symbol
V
V
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
I
I
I
C
I
|Y
C
C
Q
RRM
GSS
Q
DRP
FM(1)
FM(2)
DSS
V
t
t
Q
DSF
C
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
g
j
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
I
I
V
V
V
D
D
D
DR =
FM
FM
GS
DS
DS
GS
GS
GS
DS
DS
DD
RRM
R
GS
= -10 mA, V
= -10 mA, V
= -2.7 A
= 10 V, f = 1 MHz
3
= 0.7 A
= 1.0 A
-5 V
= -20 V, V
= -10 V, I
= -10 V, I
= -10 V, V
= ±8 V, V
= -1.8 V, I
= -2.5 V, I
= -4.5 V, I
∼ − -16 V, V
0 V
-2.7 A, V
= 20 V
Test Condition
Test Condition
Test Condition
w
D
D
DS
= 10 µs
GS
GS
GS
GS
D
D
D
GS
GS
= -200 µA
= -1.4 A
⎯
= -0.7 A
= -1.4A
= -1.4 A
= 0 V
= 0 V
= 8V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
I
V
D
DD
= -1.4 A
∼ − -10 V
V
OUT
Min
Min
Min
-0.5
-20
-12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
Typ.
0.43
0.46
215
110
470
4.7
54
⎯
⎯
⎯
⎯
⎯
72
70
80
26
⎯
⎯
⎯
5
9
8
6
4
2
TPCF8B01
2006-11-16
-10.8
Max
Max
Max
0.49
-1.2
-1.2
±10
300
160
110
-10
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
Unit
mΩ
µA
µA
pF
nC
µA
pF
ns
V
V
S
A
V
V
V