TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet - Page 4
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TPCF8104(TE85L)
Manufacturer Part Number
TPCF8104(TE85L)
Description
MOSFET P-CH 30V 6A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8104TE85LFM.pdf
(7 pages)
Specifications of TPCF8104(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8104TR
-100
-0.1
-10
-10
-5
-4
-3
-2
-1
-8
-1
-6
0
8
4
0
-0.1
0
0
-4.5
-10
Common source
V DS = -10 V
Pulse test
Common source
V DS = -10 V
Pulse test
-0.2
Drain-source voltage V DS
Gate-source voltage V GS
-1
Drain current I D (A)
100
-1
-0.4
100
-3
-2
⎪Y
I
-3.5
I
D
-2.8
D
fs
-2.7
– V
– V
⎪ – I
-2.6
Ta = −55°C
DS
25
GS
Ta = −55°C
-0.6
D
-3
Common source
Ta = 25°C
Pulse test
-10
25
V GS = -2.1V
-0.8
(V)
(V)
-4
-2.4
-2.3
-2.5
-2.2
-1.0
-100
-5
4
1000
-0.5
-0.4
-0.3
-0.2
-0.1
100
-10
10
-8
-6
-4
-2
0
1
-0.1
0
0
0
common source
Ta = 25°C
Pulse test
Drain-source voltage V DS
Gate-source voltage V GS
-3
-1
-2
-3.5
-10
-1.5
-4.5
Drain current I D (A)
-1
R
V
DS (ON)
-2
-4
I
DS
D
V GS = -10 V
-2.8
– V
– V
-4.5
DS
GS
– I
-3
-6
D
Common source
Ta = 25°C
Pulse test
-10
Common source
Ta = 25℃
Pulse test
-2.7
V GS = -2.1 V
I D = -6 A
(V)
(V)
-4
-8
-3
TPCF8104
-2.4
-2.2
-2.6
-2.5
-2.3
2006-11-16
-100
-10
-5