TPCF8102(TE85L) Toshiba, TPCF8102(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPCF8102(TE85L)
• Description: MOSFET P-CH 20V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8102(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8102TR

10000
1000
160
120
100
2.5
1.5
0.5
80
40
10
0
−80
3
2
1
0
0.1
0
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
Common source
Pulse test
V GS = −1.8 V
−2.5 V
−4.5 V
V GS = 0 V
f = 1 MHz
Ta = 25°C
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
1.0
0
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
I D = −1.5 A
P
−2.5 A
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
40
80
– Ta
I D = −1.5, −2.5, −6 A
– Ta
80
10
DS
DS
I D = −1.5, −2.5 A
C oss
C iss
C rss
120
(V)
120
−6 A
160
100
160
5
−100
−10
−20
−16
−12
2.0
1.5
1.0
0.5
−1
−8
−4
−80
0
0
0
0
Common source
Ta = 25°C
Pulse test
−2.0 V
Common source
V DS = −10 V
I D = −200 µA
Pulse test
V DS
Dynamic input/output characteristics
−4 V
−1.8 V
−40
0.4
Drain-source voltage V
Ambient temperature Ta (°C)
8
Total gate charge Q
−1 V
0
0.8
16
I
V GS = 0 V
DR
V
−4 V
th
– V
40
−8 V
– Ta
DS
1.2
24
g
V DD = −16 V
80
V GS
DS
(nC)
Common source
I D = −6 A
Ta = 25°C
Pulse test
(V)
1.6
32
120
TPCF8102
2006-11-16
160
40
2
−20
−16
−12
−8
−4
0