2SK3565 Toshiba, 2SK3565 Datasheet - Page 4

• Manufacturer Part Number: 2SK3565
• Description: MOSFET N-CH 900V 5A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3565

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 2.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
100
100
10
10
80
60
40
20
−80
8
6
4
2
0
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
V GS = 10 V
40
CAPACITANCE – V
0
1
R
80
DS (ON)
P
D
40
3
– Tc
I D = 5A
5
– Tc
120
10
80
1.5
DS
DS
160
120
30 50
C rss
C oss
C iss
3
(V)
160
100
200
4
500
400
300
200
100
0.5
0.3
0.1
10
0
−80
5
3
1
5
4
3
2
1
0
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
PULSE TEST
10
−40
Tc = 25°C
DYNAMIC INPUT / OUTPUT
−0.4
V DS
10
CHARACTERISTICS
3
0
I
V GS
DR
V
th
−0.8
– V
40
20
V GS = 0, −1 V
1
– Tc
DS
V DD = 100 V
COMMON SOURCE
I D = 5 A
Tc = 25°C
PULSE TEST
80
−1.2
g
30
DS
200
(nC)
120
2009-09-29
2SK3565
(V)
400
−1.6
160
40
20
16
12
8
4
0