2SK2551 Toshiba, 2SK2551 Datasheet - Page 2

• Manufacturer Part Number: 2SK2551
• Description: MOSFET N-CH 50V 50A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2551

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
K2551
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note
(Note 1)
(Note 1)
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= 50 A, V
= 50 A, V
= 50 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
≈ 40 V, V
/ dt = 50 A/μs
Note: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as
to environmental matters such as the RoHS compatibility of
Product. The RoHS is the Directive 2002/95/EC of the European
Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical
and electronic equipment.
2
D
D
D
GS
GS
GS
(Ta = 25°C)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
GS
GS
GS
Test Condition
Test Condition
= 1 mA
= 25 A
DS
= 25 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
D
= 50 A
Min
Min
1.5
50
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4000
2000
Typ.
Typ.
800
120
360
130
140
7.2
—
—
—
—
50
25
40
90
40
—
—
—
77
2009-09-29
2SK2551
−1.7
Max
Max
±10
100
200
3.0
11
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V