2SK1359 Toshiba, 2SK1359 Datasheet
2SK1359
Manufacturer Part Number
2SK1359
Description
MOSFET N-CH 1KV 5A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK1359F.pdf
(6 pages)
Specifications of 2SK1359
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1359
Manufacturer:
TOS
Quantity:
5 000
Company:
Part Number:
2SK1359
Manufacturer:
ST
Quantity:
50 000
DC−DC Converter and Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII
GS
DC
Pulse (Note 1)
= 20 kΩ)
: I
: V
(Note 1)
DSS
th
= 1.5 to 3.5 V (V
= 300 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK1359
fs
| = 2.0 S (typ.)
DS
= 3.0 Ω (typ.)
DS
= 10 V, I
−55~150
Rating
1000
1000
Max
±30
125
150
1.0
15
50
= 800 V)
5
1
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
.5
2-16C1B
)
2009-09-29
―
―
2SK1359
Unit: mm
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2SK1359 Summary of contents
Page 1
... DSS V 1000 DGR V ±30 GSS 125 D T 150 ch T −55~150 stg Symbol Max R 1.0 ° (ch− ° (ch− Unit V 1. GATE V 2. DRAIN (HEAT SINK) 3. SOURCE V JEDEC ― A JEITA ― W TOSHIBA 2-16C1B °C Weight: 4.6 g (typ.) °C Unit 2009-09-29 2SK1359 Unit: mm ...
Page 2
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK1359 Min Typ. Max — — ...
Page 3
... 3 2SK1359 2009-09-29 ...
Page 4
... 4 2SK1359 2009-09-29 ...
Page 5
... 5 2SK1359 2009-09-29 ...
Page 6
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK1359 2009-09-29 ...