TPC6001(TE85L,F) Toshiba, TPC6001(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPC6001(TE85L,F)
• Description: MOSFET N-CH 20V 6A VS-6
• Manufacturer: Toshiba

Specifications of TPC6001(TE85L,F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-6 (SOT-23-6)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6001(TE85L); TPC6001(TE85L,F); TPC6001FTR; TPC6001TR; TPC6001TR

10000
3000
1000
100
300
100
2.5
1.5
0.5
80
60
40
20
30
10
-80
0
0.1
2
1
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = 2 V
0.3
V GS = 4.5 V I D = 6 A, 3 A, 1.5 A
-40
Ambient temperature Ta (
Ambient temperature Ta (
40
Drain-source voltage V DS
Capacitance
0
1
R
DS (ON)
P
D
40
80
3
– Ta
(1) Device mounted on a
(2) Device mounted on a
I D = 3 A, 1.5 A
– V
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
DS
I D = 6 A, 3 A, 1.5 A
80
10
120
°
°
V GS = 2.5 V
C)
C)
C oss
C iss
C rss
120
30
6 A
160
100
160
4
100
0.3
0.1
1.4
1.2
0.8
0.6
0.4
0.2
30
10
30
25
20
15
10
-80
3
1
1
0
5
0
0
0
V DS = 16 V
Common source
I D = 6 A
Ta = 25°C
Pulse test
Dynamic input/output characteristics
-0.2
10 V
-40
4
8 V
Drain-source voltage V DS (V)
Ambient temperature Ta (
Total gate charge Q g (nC)
4 V
8
-0.4
0
5 V
3 V
I
DR
V
V GS
12
th
-0.6
– V
40
– Ta
DS
1 V
16
4 V
Common source
V DS = 10 V
I D = 200 mA
Pulse test
-0.8
80
20
Common source
Ta = 25°C
Pulse test
V GS = 0 V
°
V DD = 16 V
C)
120
-1
8 V
24
2002-01-17
TPC6001
-1.2
160
28
12
10
8
6
4
2
0