2SK2614 Toshiba, 2SK2614 Datasheet - Page 4

• Manufacturer Part Number: 2SK2614
• Description: MOSFET N-CH 50V 20A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5000
3000
1000
0.20
0.16
0.12
0.08
0.04
500
300
100
50
30
10
50
40
30
20
10
−80
0
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4 V
−40
0.3
Drain-source voltage V DS (V)
40
Case temperature Tc (°C)
Case temperature Tc (°C)
V GS = 10 V
Capacitance – V
0
1
R
80
DS (ON)
P
D
40
3
– Tc
– Tc
120
80
10
DS
I D = 12 A
160
I D = 25 A
120
30
C oss
C iss
C rss
6
12
6
160
100
200
4
100
2.0
1.6
1.2
0.8
0.4
50
50
30
10
40
30
20
10
−80
5
3
1
0
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Tc = 25°C
Pulse test
−0.2
V DS
−40
10
Drain-source voltage V DS (V)
−0.4
Total gate charge Q g (nC)
Case temperature Tc (°C)
Dynamic input / output
10
V GS
0
−0.6
characteristics
5
20
I
3
10
DR
1
V
th
20
V DD = 40 V
−0.8
40
– V
V GS = 0, −1 V
– Tc
DS
30
−1.0
80
Common source
−1.2
I D = 20 A
Ta = 25°C
Pulse test
40
120
−1.4
2009-12-21
2SK2614
−1.6
160
50
20
16
12
8
4
0