IRLBA1304PPBF International Rectifier, IRLBA1304PPBF Datasheet

MOSFET N-CH 40V 185A SUPER-220

IRLBA1304PPBF

Manufacturer Part Number
IRLBA1304PPBF
Description
MOSFET N-CH 40V 185A SUPER-220
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLBA1304PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 110A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
185A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 4.5V
Input Capacitance (ciss) @ Vds
7660pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
Super-220™-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLBA1304PPBF
Description
The HEXFET
This particular HEXFET
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline.
automotive qualification standard Q101.
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
* Current capability in normal application, see Fig.9.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Logic-Level Gate Drive
Ultra Low On-Resistance
Same outline as TO-220
50% greater current in typ.
application conditions vs. TO-220
Fully Avalanche Rated
Purchase IRLBA1304/P for solder plated option.
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
is the most popular power MOSFET in the world.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
is in the Super220
Parameter
Parameter
This package has also been designed to meet
TM
GS
GS
@ 10V
@ 10V
and has
the same outline and
G
Typ.
185, pkg limited to 95A*
130, pkg limited to 95A*
300 (1.6mm from case )
–––
–––
0.5
HEXFET
-55 to + 175
D
S
IRLBA1304
Max.
1160
± 16
740
300
100
2.0
5.0
30
20
®
R
Power MOSFET
Max.
DS(on)
Super - 220
–––
V
I
0.5
58
D
DSS
= 185A…
PD- 91842A
= 0.004
= 40V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
N
A
V
A
1
9/14/99

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IRLBA1304PPBF Summary of contents

Page 1

Logic-Level Gate Drive l Ultra Low On-Resistance Same outline as TO-220 l l 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated l Purchase IRLBA1304/P for solder plated option. Description ® The HEXFET is the most ...

Page 2

IRLBA1304 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 5.0V 4.5V 3.5V 3.0V 100 2.7V BOTTOM 2. 2.5V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

IRLBA1304 12000 1MHz iss rss gd 10000 oss iss 8000 6000 4000 C oss 2000 ...

Page 5

LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...

Page 6

IRLBA1304 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 4.5 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRLBA1304 Super-220 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro ...

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