IRF1405ZS-7P International Rectifier, IRF1405ZS-7P Datasheet - Page 6

• Manufacturer Part Number: IRF1405ZS-7P
• Description: MOSFET N-CH 55V 120A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS-7P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1405ZS-7P

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
0.01 Ω
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
1000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
800
600
400
200
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75 100 125 150 175 200
TOP
BOTTOM 88A
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125
150
I D
14A
23A
175