IRFZ44VZ International Rectifier, IRFZ44VZ Datasheet - Page 4

• Manufacturer Part Number: IRFZ44VZ
• Description: MOSFET N-CH 60V 57A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44VZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 92W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ44VZ

4
1000.0
100.0
3000
2500
2000
1500
1000
10.0
500
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
Crss
Coss
Ciss
T J = 25°C
1.0
f = 1 MHZ
10
V GS = 0V
1.4
1.8
100
1000
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 34A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 48V
VDS= 30V
VDS= 12V
10
30
FOR TEST CIRCUIT
SEE FIGURE 13
100µsec
1msec
10msec
100
40
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50
1000
60