IRF3707Z International Rectifier, IRF3707Z Datasheet - Page 3

• Manufacturer Part Number: IRF3707Z
• Description: MOSFET N-CH 30V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1210pF @ 15V
• Power - Max: 57W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3707Z

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1000
1000
10.0
100
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
0.1
2
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
3
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
4
T J = 25°C
5
1
V DS = 10V
30µs PULSE WIDTH
30µs PULSE WIDTH
Tj = 25°C
3.0V
6
T J = 175°C
7
10
8
1000
100
2.0
1.5
1.0
0.5
10
1
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
-60 -40 -20 0
TOP
BOTTOM
I D = 42A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
20 40 60 80 100 120 140 160 180
1
30µs PULSE WIDTH
Tj = 175°C
30V
3
10