IRF3711Z International Rectifier, IRF3711Z Datasheet - Page 6

• Manufacturer Part Number: IRF3711Z
• Description: MOSFET N-CH 20V 92A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 10V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3711Z

6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
0.02
0.01
0.00
Fig 12. On-Resistance Vs. Gate Voltage
I
AS
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
D.U.T
t p
0.01 Ω
L
6.0
T J = 125°C
T J = 25°C
15V
V
8.0
(BR)DSS
DRIVER
I D = 15A
+
-
V DD
10.0
A
600
500
400
300
200
100
90%
0
V
10%
V
25
Fig 14a. Switching Time Test Circuit
DS
Fig 14b. Switching Time Waveforms
Fig 13c. Maximum Avalanche Energy
GS
Starting T J , Junction Temperature (°C)
50
t
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
vs. Drain Current
V
75
GS
t
r
V
DS
100
t
d(off)
125
TOP
BOTTOM
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D.U.T
L
D
t
f
V
150
DD
8.6A
7.3A
12A
I D
+
-
175