IRLZ44ZS International Rectifier, IRLZ44ZS Datasheet - Page 3

• Manufacturer Part Number: IRLZ44ZS
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ44ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 5V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLZ44ZS

www.irf.com
1000.0
100.0
1000
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
10
1
2.0
0.1
3.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4.0
1
T J = 25°C
3.0V
5.0
V DS = 20V
≤ 60µs PULSE WIDTH
6.0
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 175°C
7.0
10
TOP
BOTTOM
8.0
9.0
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10.0
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
1000
100
60
40
20
10
0
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
10
Vs. Drain Current
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
20
V DS = 10V
380µs PULSE WIDTH
3.0V
≤ 60µs PULSE WIDTH
Tj = 175°C
30
T J = 25°C
T J = 175°C
10
40
3
100
50