IRLR024Z International Rectifier, IRLR024Z Datasheet - Page 3

• Manufacturer Part Number: IRLR024Z
• Description: MOSFET N-CH 55V 16A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR024Z

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100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
T J = 25°C
4
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 10V
≤ 60µs PULSE WIDTH
1
6
3.0V
T J = 175°C
8
10
10
12
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
0.1
10
15
10
1
5
0
0.1
0
TOP
BOTTOM
2
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
4
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
6
1
8
≤ 60µs PULSE WIDTH
Tj = 175°C
V DS = 8.0V
300µs PULSE WIDTH
T J = 25°C
T J = 175°C
10
3.0V
12
14
3
10
16