IRFR3709Z International Rectifier, IRFR3709Z Datasheet - Page 3

• Manufacturer Part Number: IRFR3709Z
• Description: MOSFET N-CH 30V 86A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3709Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3709Z

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10000
1000
1000
0.01
100
100
Fig 3. Typical Transfer Characteristics
0.1
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
0
TOP
BOTTOM
T J = 175°C
1
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1
T J = 25°C
3
2.25V
20µs PULSE WIDTH
Tj = 25°C
4
V DS = 15V
20µs PULSE WIDTH
5
10
6
7
100
8
10000
1000
100
0.1
2.0
1.5
1.0
0.5
10
1
Fig 4. Normalized On-Resistance
0.1
Fig 2. Typical Output Characteristics
-60 -40 -20 0
I D = 30A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
20 40 60 80 100 120 140 160 180
1
2.25V
20µs PULSE WIDTH
Tj = 175°C
10
100
3