IRF7807Z International Rectifier, IRF7807Z Datasheet - Page 6

• Manufacturer Part Number: IRF7807Z
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7807Z

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
300
250
200
150
100
50
90%
V
0
10%
V
DS
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
25
GS
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
r
75
V
DS
t
100
d(off)
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D.U.T
L
D
t
f
125
V
DD
+
-
150