IRF3707ZCS International Rectifier, IRF3707ZCS Datasheet - Page 5

• Manufacturer Part Number: IRF3707ZCS
• Description: MOSFET N-CH 30V 59A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707ZCS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1210pF @ 15V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3707ZCS

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0.001
60
50
40
30
20
10
0.01
0.1
0
10
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
Case Temperature
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
Limited By Package
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
Fig 10. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
0.5
R
1
R
-75 -50 -25
1
0.001
τ
2
R
τ
2
2
R
2
I D = 250µA
R
τ
T J , Temperature ( °C )
3
3
0
R
τ
3
3
25
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
τ
Ri (°C/W)
50
1.163
1.073
0.419
0.01
75 100 125 150 175 200
0.000257
0.001040
0.003089
τi (sec)
5
0.1