IRFR4105Z International Rectifier, IRFR4105Z Datasheet - Page 5
![MOSFET N-CH 55V 30A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR4105Z
Manufacturer Part Number
IRFR4105Z
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFU4105ZTR.pdf
(12 pages)
Specifications of IRFR4105Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.5 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR4105Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR4105Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
IRFR4105Z
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR4105ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRFR4105ZTRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
0.001
0.01
0.1
10
30
25
20
15
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
5
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
50
T J , Junction Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
100
1E-005
125
t 1 , Rectangular Pulse Duration (sec)
150
175
0.0001
τ
J
τ
J
τ
2.5
2.0
1.5
1.0
0.5
1
Ci= τi/Ri
τ
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i/Ri
R
I D = 18A
V GS = 10V
1
R
1
τ
2
T J , Junction Temperature (°C)
τ
R
Vs. Temperature
2
2
R
2
20 40 60 80 100 120 140 160 180
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
3
0.001
3
τ
C
τ
Ri (°C/W)
1.100
1.601
0.418
0.000174
0.000552
0.007193
τi (sec)
5
0.01