IRFR3707Z International Rectifier, IRFR3707Z Datasheet - Page 3

• Manufacturer Part Number: IRFR3707Z
• Description: MOSFET N-CH 30V 56A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3707Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1150pF @ 15V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3707Z

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10000
0.001
1000
1000
0.01
0.01
100
100
0.1
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
T J = 25°C
20µs PULSE WIDTH
Tj = 25°C
4
1
V DS = 10V
20µs PULSE WIDTH
2.2V
T J = 175°C
6
10
8
1000
100
2.0
1.5
1.0
0.5
0.1
10
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
-60 -40 -20 0
0.1
I D = 30A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
Tj = 175°C
1
2.2V
3
10