IRF7534D1TR International Rectifier, IRF7534D1TR Datasheet - Page 5

• Manufacturer Part Number: IRF7534D1TR
• Description: MOSFET P-CH 20V 4.3A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7534D1TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
Fig 9. Typical On-Resistance Vs. Drain
100
0.1
10
0.0001
0.12
0.10
0.08
0.06
0.04
1
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
0.20
0.10
0.05
0.02
0.01
V GS = -2.5V
5
-I D , Drain Current (A)
(THERMAL RESPONSE)
Current
0.001
SINGLE PULSE
V GS = -4.5V
10
Power MOSFET Characteristics
0.01
15
t , Rectangular Pulse Duration (sec)
1
20
0.1
Fig 10. Typical On-Resistance Vs. Gate
0.10
0.08
0.06
0.04
2.0
1. Duty factor D = t / t
2. Peak T = P
Notes:
-V GS, Gate -to -Source Voltage (V)
1
Voltage
3.0
J
DM
IRF7534D1
x Z
1
thJA
4.0
P
2
10
DM
+ T
I D = -4.3A
A
t
1
t
2
5.0
100
5
6.0