IRF7451 International Rectifier, IRF7451 Datasheet - Page 5

• Manufacturer Part Number: IRF7451
• Description: MOSFET N-CH 150V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7451

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100
4.0
3.0
2.0
1.0
0.0
0.1
10
0.0001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
Ambient Temperature
50
T
A
(THERMAL RESPONSE)
, Ambient Temperature (°C)
0.001
SINGLE PULSE
75
100
0.01
125
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
1
t
R
d(on)
Pulse Width
Duty Factor
G
10V
1. Duty factor D = t / t
2. Peak T = P
V
Notes:
GS
t
r
V
DS
10
J
µs
DM
x Z
1
D.U.T.
thJC
t
P
2
d(off)
IRF7451
DM
R
+ T
100
D
C
t
t
f
1
t
2
+
-
V
DD
5
1000